In a historic breakthrough, Penn State researchers have developed the world’s first computer using two-dimensional (2D) materials instead of traditional silicon. This innovation paves the way for faster, thinner, and more energy-efficient electronics.
Published in Nature on June 11, the study details the creation of a fully functional complementary metal-oxide semiconductor (CMOS) computer — the foundation of nearly all modern electronics — made entirely from atomically thin materials.
“We’ve demonstrated, for the first time, a CMOS computer built using only 2D materials,” said Dr. Saptarshi Das, lead researcher and professor of engineering at Penn State.
The team utilized molybdenum disulfide (MoS₂) for n-type transistors and tungsten diselenide (WSe₂) for p-type transistors. These materials, only a few atoms thick, retain exceptional electronic properties even at such a scale — unlike silicon, which loses performance when miniaturized.
To fabricate the transistors, the researchers used metal-organic chemical vapor deposition (MOCVD) to grow large sheets of the 2D materials and produce over 2,000 transistors. These were then tuned to operate together within a low-power CMOS logic circuit.
The resulting prototype is a one-instruction set computer capable of basic logic functions at frequencies up to 25 kHz. While not as fast as conventional processors, the project marks a monumental leap in next-generation computing.
“This is a milestone in electronics,” said Subir Ghosh, lead author and doctoral student. “Although performance can be further optimized, this is a working proof-of-concept for 2D material-based computers.”
The project also introduced a computational model that benchmarks the 2D CMOS design against advanced silicon circuits, offering insights into future improvements and scalability.
Although the field of 2D materials is still young — with major research only beginning in 2010 — the Penn State team believes development will accelerate, mirroring the early days of silicon.
This research was made possible through support from the National Science Foundation, Army Research Office, and Office of Naval Research, with crucial facilities provided by Penn State’s 2D Crystal Consortium Materials Innovation Platform (2DCC-MIP).
As the limitations of silicon become more pronounced, this achievement may mark the start of a post-silicon computing era, setting the stage for revolutionary advancements in electronic device technology.
